245 GHz subharmonic receiver in SiGe

Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt
{"title":"245 GHz subharmonic receiver in SiGe","authors":"Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt","doi":"10.1109/MWSYM.2013.6697429","DOIUrl":null,"url":null,"abstract":"A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.
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SiGe中的245ghz次谐波接收机
提出了一种用于245ghz ISM频段传感应用的次谐波接收机。接收机由一个单端共基LNA、一个带1/32分频器的60 GHz推推式压控振荡器、一个跨导4次谐波混频器和中频放大器组成。接收机采用fT/fmax=300/500 GHz SiGe: C BiCMOS技术制作。其测量的单端增益在243 GHz时为21 dB,调谐范围为12 GHz,单侧噪声系数为32 dB。输入1db压缩点为- 37dbm。接收器的耗散功率为358兆瓦。
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