Pub Date : 2012-12-01DOI: 10.23919/EUMC.2012.6459268
M. A. Khalid, A. Holland, K. Ghorbani
In this paper, results are presented for a Barium Strontium Titanate (BST) interdigital capacitor (IDC) which is designed and simulated to analyze the effect of variations in its geometry on the shape of the nonlinear capacitance - voltage (C-V) curve. From this analysis, the narrow, broad and intermediate C-V curves are determined. The broad curve could withstand input power of up to 41 dBm compared to 32 dBm and 29 dBm for the intermediate and narrow curves respectively. The tunabilities of the broad, itermediate, and narrow curves are 28%, 54%, and 73% respectively.
{"title":"Barium Strontium Titanate varactors with high 1 dB compression points","authors":"M. A. Khalid, A. Holland, K. Ghorbani","doi":"10.23919/EUMC.2012.6459268","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459268","url":null,"abstract":"In this paper, results are presented for a Barium Strontium Titanate (BST) interdigital capacitor (IDC) which is designed and simulated to analyze the effect of variations in its geometry on the shape of the nonlinear capacitance - voltage (C-V) curve. From this analysis, the narrow, broad and intermediate C-V curves are determined. The broad curve could withstand input power of up to 41 dBm compared to 32 dBm and 29 dBm for the intermediate and narrow curves respectively. The tunabilities of the broad, itermediate, and narrow curves are 28%, 54%, and 73% respectively.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126298348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An X-band reflection-type phase shifter (RTPS) with full 360o continuous phase shift, low insertion loss, and low gain deviation using standard 0.15-μm HEMT process is demonstrated in this paper. Two circuit implementation techniques are employed: π-type reflection loads and folded Lange coupler. The π-type reflection loads and the folded Lange coupler are utilized in one stage reflection-type phase shifter to cover more than 180° phase tuning. Cascade of two stage RTPS is adopted to achieve 360° phase tuning. Measurements show signal losses of 6.4dB±1.4dB including pad loss, low gain deviation of 0.8 dB, and a 360° continuously tunable range across 11~13 GHz with 0-mW dc power consumption. To the best of our knowledge, the proposed phase shifter has the highest FOM of 46.2(°/dB), among all reported 360° X-band CMOS phase shifters.
{"title":"An X-band full-360° reflection type phase shifter with low insertion loss","authors":"Wei-Tsung Li, Yen-Hung Kuo, Yi-Ming Wu, J. Cheng, Tian-Wei Huang, Jeng‐Han Tsai","doi":"10.23919/EUMC.2012.6459298","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459298","url":null,"abstract":"An X-band reflection-type phase shifter (RTPS) with full 360o continuous phase shift, low insertion loss, and low gain deviation using standard 0.15-μm HEMT process is demonstrated in this paper. Two circuit implementation techniques are employed: π-type reflection loads and folded Lange coupler. The π-type reflection loads and the folded Lange coupler are utilized in one stage reflection-type phase shifter to cover more than 180° phase tuning. Cascade of two stage RTPS is adopted to achieve 360° phase tuning. Measurements show signal losses of 6.4dB±1.4dB including pad loss, low gain deviation of 0.8 dB, and a 360° continuously tunable range across 11~13 GHz with 0-mW dc power consumption. To the best of our knowledge, the proposed phase shifter has the highest FOM of 46.2(°/dB), among all reported 360° X-band CMOS phase shifters.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128059082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-29DOI: 10.23919/EUMC.2012.6459187
M. McCulloch, E. Blackhurst, R. Davis, A. Galtress, D. George, S. Melhuish, L. Piccirillo
We present the designs for and the results of a prototype cryogenic Ka-band low noise amplifier (LNA), that is based on the hybridization of microwave integrated circuits (MICs) and monolithic microwave integrated circuits (MMICs). The resulting transistor plus MMIC (T+MMIC) 5 stage LNA, has a peak gain of 52dB, a minimum noise temperature of 12K at an ambient temperature of ≈23K, and a 20% bandwidth of 27-33GHz. We outline the background behind the LNA, our measurement process, the LNA's performance, our future development plans and discuss the possible advantages that this amplifier layout may offer.
{"title":"A low noise Ka-band amplifier for radio astronomy","authors":"M. McCulloch, E. Blackhurst, R. Davis, A. Galtress, D. George, S. Melhuish, L. Piccirillo","doi":"10.23919/EUMC.2012.6459187","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459187","url":null,"abstract":"We present the designs for and the results of a prototype cryogenic Ka-band low noise amplifier (LNA), that is based on the hybridization of microwave integrated circuits (MICs) and monolithic microwave integrated circuits (MMICs). The resulting transistor plus MMIC (T+MMIC) 5 stage LNA, has a peak gain of 52dB, a minimum noise temperature of 12K at an ambient temperature of ≈23K, and a 20% bandwidth of 27-33GHz. We outline the background behind the LNA, our measurement process, the LNA's performance, our future development plans and discuss the possible advantages that this amplifier layout may offer.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132727833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-29DOI: 10.23919/EUMC.2012.6459174
G. Nicolini, C. Guines, D. Passerieux, P. Blondy, G. Neveu, M. Dussauby, W. Rebernak, M. Giraudo
This paper presents the design and the performances of a tunable UHF filter that uses MEMS capacitors arrays. Central frequency of the filter varies from 278 to 385 MHz and can be adjusted by actuating a desired number of MEMS. Thanks to a specific topology and well-chosen input and output tank circuits, the absolute bandwidth varies from 13 to 14 MHz and can be considered as constant.
{"title":"Constant absolute bandwidth UHF tunable filter using RF MEMS","authors":"G. Nicolini, C. Guines, D. Passerieux, P. Blondy, G. Neveu, M. Dussauby, W. Rebernak, M. Giraudo","doi":"10.23919/EUMC.2012.6459174","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459174","url":null,"abstract":"This paper presents the design and the performances of a tunable UHF filter that uses MEMS capacitors arrays. Central frequency of the filter varies from 278 to 385 MHz and can be adjusted by actuating a desired number of MEMS. Thanks to a specific topology and well-chosen input and output tank circuits, the absolute bandwidth varies from 13 to 14 MHz and can be considered as constant.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130391188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-29DOI: 10.23919/EUMC.2012.6459200
K. Frigui, S. Bila, D. Baillargeat, A. Catherinot, S. Verdeyme, J. Puech, L. Estagerie, D. Pacaud, H. Dillenbourg
While characterizing OMUX filters at atmospheric pressure, electrical breakdown can occur involuntarily and damage the equipment. The phenomenon of breakdown was studied and our objective was to propose a multi-physical modeling, in order to predict the critical input power which can generate such a microwave breakdown. In this paper we present the microwave breakdown threshold at several frequency bands and we propose a solution to relax the microwave breakdown threshold.
{"title":"A solution to relax breakdown threshold in waveguide filters","authors":"K. Frigui, S. Bila, D. Baillargeat, A. Catherinot, S. Verdeyme, J. Puech, L. Estagerie, D. Pacaud, H. Dillenbourg","doi":"10.23919/EUMC.2012.6459200","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459200","url":null,"abstract":"While characterizing OMUX filters at atmospheric pressure, electrical breakdown can occur involuntarily and damage the equipment. The phenomenon of breakdown was studied and our objective was to propose a multi-physical modeling, in order to predict the critical input power which can generate such a microwave breakdown. In this paper we present the microwave breakdown threshold at several frequency bands and we propose a solution to relax the microwave breakdown threshold.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124027076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-28DOI: 10.23919/EUMC.2012.6459386
N. Mahdi, S. Bila, S. Verdeyme, M. Aubourg, C. Durousseau, A. Bessaudou, J. Puech, L. Estagerie, D. Pacaud, H. Leblond
This article describes the development of a library of computer-aided-design (CAD) optimization techniques for advanced design of microwave components. The microwave components are modeled by finite elements and their dimensions and shape are optimized using four methods: design of experiments (DoE), level-set method (LS), topology gradient method (TG) and genetic algorithm (GA). The various techniques allow determining the optimal geometry, shape or topology of 2D or 3D objects within the component, by minimizing iteratively a cost function related to desired specifications. These global and local optimization methods are coupled together resulting in an optimization library where the various techniques can be selected successively in order to acquire a much better result compared to methods applied solely. The approach is illustrated by the design of dielectric resonators with improved unloaded quality factor.
{"title":"Computer aided design and structural optimization for microwave components","authors":"N. Mahdi, S. Bila, S. Verdeyme, M. Aubourg, C. Durousseau, A. Bessaudou, J. Puech, L. Estagerie, D. Pacaud, H. Leblond","doi":"10.23919/EUMC.2012.6459386","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459386","url":null,"abstract":"This article describes the development of a library of computer-aided-design (CAD) optimization techniques for advanced design of microwave components. The microwave components are modeled by finite elements and their dimensions and shape are optimized using four methods: design of experiments (DoE), level-set method (LS), topology gradient method (TG) and genetic algorithm (GA). The various techniques allow determining the optimal geometry, shape or topology of 2D or 3D objects within the component, by minimizing iteratively a cost function related to desired specifications. These global and local optimization methods are coupled together resulting in an optimization library where the various techniques can be selected successively in order to acquire a much better result compared to methods applied solely. The approach is illustrated by the design of dielectric resonators with improved unloaded quality factor.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459253
Nasimuddin, Zhi Ning Chen, X. Qing
A dual, metamaterials, substrate integrated, leaky-wave structures for antenna applications is proposed to improve the antenna gain. The proposed antenna consists of two composite right/left-handed substrate integrated waveguide leaky-wave structures. A common vias wall is used to combine the leaky-wave structures. The dual leaky-wave structures based antenna is designed, fabricated, and measured. The measured gain more than of 12.0 dBi with variation of 3.0 dB is achieved over the frequency range from 8.25 to 12.0 GHz. The measured beam scanning range is from -52° to 68° over a frequency band of 8.0-13.0 GHz.
{"title":"Dual metamaterials substrate integrated leaky-wave structures for antenna applications","authors":"Nasimuddin, Zhi Ning Chen, X. Qing","doi":"10.23919/EUMC.2012.6459253","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459253","url":null,"abstract":"A dual, metamaterials, substrate integrated, leaky-wave structures for antenna applications is proposed to improve the antenna gain. The proposed antenna consists of two composite right/left-handed substrate integrated waveguide leaky-wave structures. A common vias wall is used to combine the leaky-wave structures. The dual leaky-wave structures based antenna is designed, fabricated, and measured. The measured gain more than of 12.0 dBi with variation of 3.0 dB is achieved over the frequency range from 8.25 to 12.0 GHz. The measured beam scanning range is from -52° to 68° over a frequency band of 8.0-13.0 GHz.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115388282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459162
M. Akra, H. Issa, E. Pistono, A. Jrad, N. Corrao, P. Ferrari
A compact bandpass filter with a large rejection band is designed using short-circuited Stub-loaded Resonators (SLRs). The fundamental resonance frequency and higher order resonant harmonics of the considered SLR are established. It is found that the first spurious resonance frequency can be conveniently controlled. For a proof-of-concept, a three-pole filter designed at 1 GHz, with a 6 % fractional bandwidth is fabricated and measured. A measured 2.3-dB insertion loss is achieved, with a first spurious passband located at four times the working frequency, i.e. 4 Ghz. Then, a U “corner” structure is considered to create a transmission zero at the upper stopband close to the high cut-off frequency leading to a deeper stopband rejection. Measurement and simulation results are in good agreement, thus validating the new concepts developed in this paper.
{"title":"Parallel-coupled Stub-loaded Resonator filters with wide spurious suppression","authors":"M. Akra, H. Issa, E. Pistono, A. Jrad, N. Corrao, P. Ferrari","doi":"10.23919/EUMC.2012.6459162","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459162","url":null,"abstract":"A compact bandpass filter with a large rejection band is designed using short-circuited Stub-loaded Resonators (SLRs). The fundamental resonance frequency and higher order resonant harmonics of the considered SLR are established. It is found that the first spurious resonance frequency can be conveniently controlled. For a proof-of-concept, a three-pole filter designed at 1 GHz, with a 6 % fractional bandwidth is fabricated and measured. A measured 2.3-dB insertion loss is achieved, with a first spurious passband located at four times the working frequency, i.e. 4 Ghz. Then, a U “corner” structure is considered to create a transmission zero at the upper stopband close to the high cut-off frequency leading to a deeper stopband rejection. Measurement and simulation results are in good agreement, thus validating the new concepts developed in this paper.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122739114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459327
U. Karthaus, D. Sukumaran, L. Schmidt, S. Ahles, H. Wagner
After providing an introduction to active antenna systems (AAS) for cellular infrastructure, this paper presents power amplifier (PA) modules based on a balanced configuration of 2-8 fully integrated Doherty MMIC PAs. To our knowledge for the first time, a module with four Doherty MMIC PAs in a balanced configuration has been fabricated and tested. For a 10 MHz wide LTE downlink signal at 751 MHz, average and peak output power levels were 37.8 dBm and 45.0 dBm, respectively, with ACPR ≤-48.5 dBc. Overall PAE was 34 %.
{"title":"A 45 dBm balanced power amplifier module based on four fully integrated Doherty PA MMICs A scalable solution for cellular infrastructure active antenna systems","authors":"U. Karthaus, D. Sukumaran, L. Schmidt, S. Ahles, H. Wagner","doi":"10.23919/EUMC.2012.6459327","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459327","url":null,"abstract":"After providing an introduction to active antenna systems (AAS) for cellular infrastructure, this paper presents power amplifier (PA) modules based on a balanced configuration of 2-8 fully integrated Doherty MMIC PAs. To our knowledge for the first time, a module with four Doherty MMIC PAs in a balanced configuration has been fabricated and tested. For a 10 MHz wide LTE downlink signal at 751 MHz, average and peak output power levels were 37.8 dBm and 45.0 dBm, respectively, with ACPR ≤-48.5 dBc. Overall PAE was 34 %.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117034641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459154
Jialin Cai, T. Brazil
As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.
{"title":"X-parameter-based frequency doubler design","authors":"Jialin Cai, T. Brazil","doi":"10.23919/EUMC.2012.6459154","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459154","url":null,"abstract":"As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129957521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：