Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell
{"title":"A single nanoparticle silicon transistor","authors":"Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell","doi":"10.1109/DRC.2005.1553104","DOIUrl":null,"url":null,"abstract":"Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.