Elimination of opens failure between via holes and traces in LTCC multilayer substrate by coherent shrinkage

X. He, X. Ma, Y. Zhang
{"title":"Elimination of opens failure between via holes and traces in LTCC multilayer substrate by coherent shrinkage","authors":"X. He, X. Ma, Y. Zhang","doi":"10.1109/IPFA.2001.941472","DOIUrl":null,"url":null,"abstract":"MCM-C technology is based on the use of a multilayer ceramic substrate as the carrier for the various chip devices. Low temperature co-fired ceramic (LTCC), with the advantage of higher wiring density and lower dielectric constant, is widely used as the multilayer substrate for high density electronic packaging, such as MCM-C. The low firing temperature enables the use of precious metals in the conducting layers. With the development of MCM technology, the LTCC substrate is larger and has many more layers to satisfy the increasing assembly performance requirements. However, with the enlargement of substrate area, the firing shrinkage mismatch between the metal conductor and the ceramic matrix leads to the more serious problem of open failures (Imanaka et al., 1992; Miura et al., 1994; Itagaki et al., 1993). In this work, the open failure between via holes and traces in LTCC substrates was studied. The effect of compacting temperature, ceramic particle size, softening point, stack process and firing profile was reported. Finally, by means of coherent shrinkage, the open failure between via holes and traces in LTCC was eliminated effectively.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2001.941472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

MCM-C technology is based on the use of a multilayer ceramic substrate as the carrier for the various chip devices. Low temperature co-fired ceramic (LTCC), with the advantage of higher wiring density and lower dielectric constant, is widely used as the multilayer substrate for high density electronic packaging, such as MCM-C. The low firing temperature enables the use of precious metals in the conducting layers. With the development of MCM technology, the LTCC substrate is larger and has many more layers to satisfy the increasing assembly performance requirements. However, with the enlargement of substrate area, the firing shrinkage mismatch between the metal conductor and the ceramic matrix leads to the more serious problem of open failures (Imanaka et al., 1992; Miura et al., 1994; Itagaki et al., 1993). In this work, the open failure between via holes and traces in LTCC substrates was studied. The effect of compacting temperature, ceramic particle size, softening point, stack process and firing profile was reported. Finally, by means of coherent shrinkage, the open failure between via holes and traces in LTCC was eliminated effectively.
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用相干收缩法消除LTCC多层衬底中通孔和迹线之间的开口失效
MCM-C技术是基于使用多层陶瓷衬底作为各种芯片器件的载体。低温共烧陶瓷(LTCC)具有较高的布线密度和较低的介电常数等优点,被广泛用作高密度电子封装的多层衬底,如MCM-C。较低的烧成温度使得在导电层中使用贵金属成为可能。随着MCM技术的发展,LTCC基板尺寸越来越大,层数越来越多,以满足日益增长的组装性能要求。然而,随着衬底面积的扩大,金属导体与陶瓷基体之间的烧成收缩失配会导致更严重的开路失效问题(Imanaka etal ., 1992;Miura et al., 1994;Itagaki et al., 1993)。在这项工作中,研究了LTCC衬底中通孔和迹线之间的开放失效。研究了压实温度、陶瓷粒度、软化点、堆积工艺和烧成型态等因素对烧结效果的影响。最后,采用相干收缩的方法,有效地消除了LTCC中通孔和迹线之间的开放破坏。
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