{"title":"A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications","authors":"Xuecheng Cui, Dong Liu, Jifang Cao, Xiao Yu, Bing Chen","doi":"10.1109/ICTA56932.2022.9962988","DOIUrl":null,"url":null,"abstract":"In this paper, the oxide fused and anti-fused behavior has been observed in a simple metal-oxide-metal device: Pt/HfO2/NiOx/Ni. The anti-fused state and fused state can be achieved by applying program voltage on the devices with or without current compliance, respectively. And the resistance window of the two states reaches about 109, which can effectively reduce the possibility of incorrect programming. It also showed excellent retention characteristics and a simple structure friendly for integration. It can be well used in the field of high reliability of one-time programmable memory.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9962988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the oxide fused and anti-fused behavior has been observed in a simple metal-oxide-metal device: Pt/HfO2/NiOx/Ni. The anti-fused state and fused state can be achieved by applying program voltage on the devices with or without current compliance, respectively. And the resistance window of the two states reaches about 109, which can effectively reduce the possibility of incorrect programming. It also showed excellent retention characteristics and a simple structure friendly for integration. It can be well used in the field of high reliability of one-time programmable memory.
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