Dynamic Critical Resistance: A Timing-Based Critical Resistance Model for Statistical Delay Testing of Nanometer ICs

Abstract

As CMOS IC feature sizes shrink down to the nanometer regime, the need for more efficient test methods capable of dealing with new failure mechanisms increases. Advances in this domain require a detailed knowledge of these failure physical properties and the development of appropriated test methods. Several works have shown the relative increase of resistive defects (both opens and shorts), and that they mainly affect circuit timing rather than impacting its static DC behavior. Defect evolution, together with the increase of parameter variations, represents a serious challenge for traditional delay test methods based on fixed time delay limit setting. One alternative to deal with variation relies on adopting correlation where test limits for one parameter are settled based on its correspondence to other circuit variables. In particular, the correlation of circuit delay to reduced V DD has been proposed as a useful test method. In this work the authors investigate the merits of this technique for future technologies where variation is predicted to increase, analyzing the possibilities of detecting resistive shorts and opens