Novel metal/2-DEG junction transistors

Abstract

We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.<>