Impact of CMOS process scaling and SOI on the soft error rates of logic processes

S. Hareland, J. Maiz, M. Alavi, K. Mistry, Steve Walsta, C. Dai
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引用次数: 141

Abstract

Technology scaling, reduction in operating voltages, and the increase in cache size and circuit complexity have been key enablers to achieving the performance improvement expectation dictated by Moore's Law. The resulting reduction in the node charge of circuit latches and cache cells has resulted in an ever increasing soft error rate (SER) estimation for logic components. This paper reports the SER impact of process scaling over four technology generations (0.35, 0.25, 0.18, 0.13 /spl mu/m) and provides an experimental assessment of alpha and, for the first time, neutron SER on advanced SOI processes, which have been considered as a possible method to reduce the SER of advanced technologies.
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CMOS制程缩放和SOI对逻辑制程软错误率的影响
技术的可扩展性、工作电压的降低以及缓存大小和电路复杂性的增加是实现摩尔定律所规定的性能改进预期的关键因素。电路锁存器和缓存单元的节点电荷的减少导致逻辑组件的软错误率(SER)估计不断增加。本文报道了4代工艺尺度(0.35、0.25、0.18、0.13 /spl mu/m)对过程SER的影响,并首次对先进SOI工艺的alpha和中子SER进行了实验评估,这被认为是降低先进技术SER的可能方法。
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