Quantitative assessment of the single-band model in the silicon based resonant tunneling devices

Abstract

We analyse the adequacy of the single-band model in Si based resonant tunneling devices (RTD's) as opposed to a multi-band model which is closer to real systems due to the fact that Si is an indirect bandgap semiconductor. Our calculations based on non-equilibrium Green function formalism show that a single band model with tunneling light electrons in Si is quantitatively sound in simulating Si based RTD's. It is found that light electrons contribute not only through 2-dimensional (2D) transverse density of states but also through the transparency of the barriers. Thus a single-band model can be safely used in applications.