The impact of channel doping in junctionless field effect transistor

Abstract

In this paper, we present the simple approach in study the impact of channel doping on the operation of the junctionless transistor transistor in 25 nm gate lengths through 2D-TCAD Sentaurus simulation tools. We increase the channel doping up to the level of doping source and drain, thus creating the junctionless phenomena between source and drain. The transistor parameters such as threshold voltage, transconductance, subthreshold slope, drain-induced barrier lowering are extracted. The impacts of low and high drain voltages are also considered. The higher the doping concentration the larger drain current can be produced, however the drawback is larger subthreshold slope is also obtained due to wider channel preventing fully-depletion.