TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

Abstract

We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.