A novel low power, high performance design technique for domino logic

Sunil Kavatkar, Girish Gidaye
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引用次数: 3

Abstract

Domino logic circuits are most often used in high performance designs such as microprocessors because of high speed and less area over the static logic. But these domino logics suffer from high power dissipation and low noise tolerance. In this paper the earlier proposed techniques to reduce power consumption of Domino logic such as Dual Threshold Voltage (DTV), Dual Threshold Voltage-Voltage Scaling (DTVS) and Stacked Transistor Dual Threshold Voltage (ST-DTV) are analyzed. A novel technique using Dual Threshold Voltage technique with Stacked Transistor only in pull-up path along with Voltage Scaling and Charge Sharing technique is proposed in this paper. The proposed technique gives smaller power dissipation with better Power Delay Product (PDP) compared to earlier power reduction techniques. The gate length biasing technique can be used to further reduce the leakage power. The impact of gate length biasing on the proposed design is shown in the later part of the paper. The proposed design is simulated using 3 input OR gate at 28 nm bulk CMOS technology. The simulations are performed with Mentor Graphics ELDO 13.2 and EZ-wave simulators.
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一种新颖的低功耗、高性能的多米诺逻辑设计技术
Domino逻辑电路最常用于高性能设计(如微处理器),因为它速度快,占用静态逻辑的面积少。但这些多米诺骨牌逻辑存在高功耗和低噪声容忍度的问题。本文分析了先前提出的降低Domino逻辑功耗的技术,如双阈值电压(DTV)、双阈值电压-电压缩放(DTV)和堆叠晶体管双阈值电压(ST-DTV)。本文提出了一种利用双阈值电压技术与电压缩放和电荷共享技术在上拉路径上叠加晶体管的新技术。与早期的功耗降低技术相比,该技术具有更小的功耗和更好的功率延迟积(PDP)。栅极长度偏置技术可以进一步降低泄漏功率。栅极长度偏置对所提出的设计的影响将在本文的后半部分显示。采用3输入OR门的28纳米块体CMOS技术对所提出的设计进行了仿真。使用Mentor Graphics ELDO 13.2和EZ-wave模拟器进行仿真。
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