Reliability prediction of MOS devices: experiments and model for charge build up and annealing

Abstract

Similarities between bias-temperature (BT) and ionizing radiation stress results suggest a common microscopic nature of defects for oxide charge build-up and annealing. Therefore, experiments were performed to check the influence of technology and experimental conditions. A model based on chemical reaction between silicon and hydrogen can be used as a basis for understanding BT stress results and utilizing ionizing radiation as a rapid reliability screening tool.<>