I. Sakai, H. Abiko, H. Kawaguchi, T. Hirayama, L.E.G. Johansson, K. Okabe
{"title":"A new salicide process (PASET) for sub-half micron CMOS","authors":"I. Sakai, H. Abiko, H. Kawaguchi, T. Hirayama, L.E.G. Johansson, K. Okabe","doi":"10.1109/VLSIT.1992.200647","DOIUrl":null,"url":null,"abstract":"A Ti salicide process featuring pre-amorphization before Ti film deposition and sequential two-step sintering (PASET) for sub-half-micron CMOS is discussed. Pre-amorphization by As implantation can realize low and uniform sheet resistance TiSi/sub 2/ on highly As-doped n+ poly and diffusion layers with sub-half micron line width. Implanted As for pre-amorphization and sequential two step sintering prevents the TiSi/sub 2/ overgrowth on p+ poly and diffusion layers. The PASET process technology widens the process window. The resulting n- and p-MOSFETs show excellent characteristics.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
A Ti salicide process featuring pre-amorphization before Ti film deposition and sequential two-step sintering (PASET) for sub-half-micron CMOS is discussed. Pre-amorphization by As implantation can realize low and uniform sheet resistance TiSi/sub 2/ on highly As-doped n+ poly and diffusion layers with sub-half micron line width. Implanted As for pre-amorphization and sequential two step sintering prevents the TiSi/sub 2/ overgrowth on p+ poly and diffusion layers. The PASET process technology widens the process window. The resulting n- and p-MOSFETs show excellent characteristics.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
