S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck
{"title":"A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication","authors":"S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck","doi":"10.23919/eumc.2018.8541551","DOIUrl":null,"url":null,"abstract":"By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2018.8541551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.