A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication

S. Riedmüller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, F. Scholz, H. Blanck
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Abstract

By utilizing a novel three-layer resist process, InAIN/AIN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different T -gate shapes on RF power performance is reported. A T -gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.
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高电子迁移率晶体管中T栅极和T栅极的三层阻化工艺
利用一种新颖的三层抗蚀剂工艺,制备了栅极长度小于0.1 μm的InAIN/AIN/GaN T栅极和T栅极高电子迁移率晶体管。该工艺基于单曝光步骤的直接电子束光刻。此外,还报道了不同T栅极形状对射频功率性能的影响。将T栅极移到欧姆触点的源侧,可以降低栅极漏极电容,提高晶体管射频换能器增益Gt。
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