S. Ryu, S. Krishnaswami, M. O'loughlin, J. Richmond, A. Agarwal, J. Palmour, A.R. Heffier
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引用次数: 20
Abstract
Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.
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