Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

Zhaozhao Zhu, T. Mankowski, K. Balakrishnan, A. S. Shikoh, F. Touati, M. Benammar, M. Mansuripur, C. Falco
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引用次数: 9

Abstract

Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.
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本征、掺铝和掺镓氧化锌薄膜作为透明导电电极的溶胶-凝胶沉积和等离子体处理
采用溶胶-凝胶自旋镀膜技术制备了氧化锌和掺铝/镓氧化锌薄膜。采用等离子体处理替代热后退火,我们发现这些薄膜的形貌发生了变化,薄片电阻显著增强。这些经等离子体处理的薄膜也显示出非常好的光学性能,在可见光波长范围内的平均透过率超过90%。我们最好的铝/镓掺杂氧化锌薄膜的片电阻(Rs)分别为~ 200 Ω/sq和~ 150 Ω/sq。
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