Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, N. Okamoto, Masaru Sato, S. Masuda, Keiji Watanabe
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引用次数: 5
Abstract
A new design methodology was proposed to obtain wide-bandwidth and flat-group-delay reactive-matching GaN HEMT MMIC amplifiers. Frequency dependence of the optimal source and load impedance of a GaN HEMT are derived as polynomial equations and matching circuits are designed by small signal simulation without the use of large-signal transistor model and large-signal simulation. Fabricated GaN HEMT MMIC amplifiers, which show a small deviation of Pout and PAE in the range of 8-18 GHz, prove that our methodology is suitable for the design of a wide-bandwidth MMIC amplifier.
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