G. Brezeanu, J. Fernandez, J. Millán, J. Rebollo, M. Badila, G. Dilimot, P. Lungu
{"title":"MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure","authors":"G. Brezeanu, J. Fernandez, J. Millán, J. Rebollo, M. Badila, G. Dilimot, P. Lungu","doi":"10.1109/SMICND.1996.557433","DOIUrl":null,"url":null,"abstract":"A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.
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