Trends and Future Challenges of 3D NAND Flash Memory

S. Shim, J. Jang, J. Song
{"title":"Trends and Future Challenges of 3D NAND Flash Memory","authors":"S. Shim, J. Jang, J. Song","doi":"10.1109/IMW56887.2023.10145825","DOIUrl":null,"url":null,"abstract":"NAND flash memory industry has made significant progress in the density and technology since the introduction of 3D NAND flash memory. It took only a few years to change the mainstream of the NAND flash memory from 2D NAND to 3D NAND thanks to its superior cell characteristics with bit cost scalability in spite of the difficulties in process. Up to now, 3D NAND technology also has been advancing rapidly, driving bit growth scaling with the increase in the number of vertical word lines. However, NAND flash memory industry is constantly encountering the new challenges in terms of the capacity and performance. In this paper, we review trends and key technologies during the evolution of 3D NAND flash memory and the challenges NAND industry need to solve to meet the growing market requirement.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145825","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

NAND flash memory industry has made significant progress in the density and technology since the introduction of 3D NAND flash memory. It took only a few years to change the mainstream of the NAND flash memory from 2D NAND to 3D NAND thanks to its superior cell characteristics with bit cost scalability in spite of the difficulties in process. Up to now, 3D NAND technology also has been advancing rapidly, driving bit growth scaling with the increase in the number of vertical word lines. However, NAND flash memory industry is constantly encountering the new challenges in terms of the capacity and performance. In this paper, we review trends and key technologies during the evolution of 3D NAND flash memory and the challenges NAND industry need to solve to meet the growing market requirement.
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3D NAND快闪记忆体的趋势与未来挑战
自3D NAND闪存问世以来,NAND闪存产业在密度和技术方面取得了重大进展。NAND闪存的主流从2D NAND转变为3D NAND仅用了几年的时间,这得益于其优越的单元特性和位成本可扩展性,尽管在工艺上存在困难。到目前为止,3D NAND技术也一直在快速发展,随着垂直字线数量的增加,比特增长规模也在不断扩大。然而,NAND闪存产业在容量和性能方面不断遇到新的挑战。在本文中,我们回顾了3D NAND闪存的发展趋势和关键技术,以及NAND产业需要解决的挑战,以满足不断增长的市场需求。
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