Surface Oriented Self Assembled Growth of Carbon Nanotubes

K. Sivakumar, B. Panchapakesan
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引用次数: 1

Abstract

We report the self assembled surface oriented growth of single walled carbon nanotubes along the surface of (100), (110) and (111) silicon wafers using thermal CVD. The nanotubes were grown using iron nanoparticles, 10 nm in diameter, as the catalyst. The growth was carried out at 1000oC in a methane atmosphere. The lattice matching of the silicon and iron crystal lattices led to the formation of self aligned silicides at a high temperature which helped orient the nanotubes. SEM, TEM and AFM characterization revealed single wall carbon nanotubes, about 10 nm in diameter and up to 10 μm in length, growing along the <111> direction of the silicon substrate. This process is easy, reliable and may enable the integration of nanotubes with CMOS processing technology.
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碳纳米管表面自组装生长研究
我们报道了利用热CVD技术沿(100)、(110)和(111)硅片表面生长单壁碳纳米管的自组装表面取向。纳米管的生长采用直径为10纳米的铁纳米颗粒作为催化剂。生长在1000℃的甲烷大气中进行。硅和铁晶格的晶格匹配导致在高温下形成自排列的硅化物,这有助于纳米管的定向。SEM、TEM和AFM表征表明,碳纳米管直径约10 nm,长度可达10 μm,沿硅衬底方向生长。该工艺简单、可靠,可实现纳米管与CMOS加工技术的集成。
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