A. Abare, S. Keller, M. Mack, L. Coldren, S. Denbaars
{"title":"Barrier and well width study of InGaN/GaN multiple quantum wells","authors":"A. Abare, S. Keller, M. Mack, L. Coldren, S. Denbaars","doi":"10.1109/LEOSST.1997.619246","DOIUrl":null,"url":null,"abstract":"InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
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