SRAM sense amplifier offset cancellation using BTI stress

Abstract

Device variability in modern processes has become a major concern in SRAM design leading to degradation of both performance and yield. Variation induced offset in the sense amplifiers requires a larger bitline differential, which slows down SRAM access times. In this paper, we propose a post fabrication technique that takes advantage of the typically detrimental bias temperature instability (BTI) aging effect to improve SRAM sense amplifier offset.