Shih-Kai Lin, T. Chang, Wei‐Chen Huang, Yung‐Fang Tan, Chen‐Hsin Lien
{"title":"Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device","authors":"Shih-Kai Lin, T. Chang, Wei‐Chen Huang, Yung‐Fang Tan, Chen‐Hsin Lien","doi":"10.1109/ICMTS55420.2023.10094175","DOIUrl":null,"url":null,"abstract":"High resistance state (HRS) resistance on the set voltage in hafnium oxide-based resistance random access memory (RRAM) is investigated. Set voltage has a positive correlation to HRS in statistics. For analyzing the switching characteristics at different HRS resistance level, filament properties in the switching layer are analyzed by current-fitting technique. The fitting results show that Schottky distance becomes saturated at high resistance HRS. Finally, a physical model is proposed to explain our observation.","PeriodicalId":275144,"journal":{"name":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS55420.2023.10094175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High resistance state (HRS) resistance on the set voltage in hafnium oxide-based resistance random access memory (RRAM) is investigated. Set voltage has a positive correlation to HRS in statistics. For analyzing the switching characteristics at different HRS resistance level, filament properties in the switching layer are analyzed by current-fitting technique. The fitting results show that Schottky distance becomes saturated at high resistance HRS. Finally, a physical model is proposed to explain our observation.
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