B. Bertrand, L. Hutin, L. Bourdet, A. Corna, B. Jadot, H. Bohuslavskvi, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Francerschi, Y. Niquet, M. Vinet
{"title":"Development of spin quantum bits in SOI CMOS technology","authors":"B. Bertrand, L. Hutin, L. Bourdet, A. Corna, B. Jadot, H. Bohuslavskvi, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Francerschi, Y. Niquet, M. Vinet","doi":"10.1109/NANO.2018.8626273","DOIUrl":null,"url":null,"abstract":"Abst ract We pres ent the rece nt adva nces mad e tow ards the reali zati on of elect ron and hole qua ntu m bit devi ces on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Abst ract We pres ent the rece nt adva nces mad e tow ards the reali zati on of elect ron and hole qua ntu m bit devi ces on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed.
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