High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528731

Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars

{"title":"High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication","authors":"Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars","doi":"10.1109/ICIPRM.2016.7528731","DOIUrl":null,"url":null,"abstract":"The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm2 in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA1/2 and calculated differential gain was 2.2 × 10-16 cm2. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

The modulation characteristics of high-performance In_0.1Ga_0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm₂ in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA_1/2 and calculated differential gain was 2.2 × 10-16 cm². 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

(202)平面上iii -氮化物410 nm脊状激光二极管的高速可见光通信性能

研究了高性能In0.1Ga0.9N/GaN连续波脊状激光二极管的调制特性。采用低阻顶部n型触点设计，采用金属有机化学气相沉积(MOCVD)技术在(202 ~ 1 ~)上生长高功率连续工作的激光外延结构。1200 μm长、3 μm宽腔的阈值电流密度为6.1 kA/cm2。实测的谐振频率斜率效率为0.3268 GHz/mA1/2，计算的差分增益为2.2 × 10-16 cm2。得到了-3 dB带宽的4.3 GHz，并根据阻尼系数计算出了最大本征带宽的10.2 GHz。采用大信号调制法测量5gbit /s数据速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

自引率

0.00%

发文量