Interface states at high- к /InGaAs interface: H2O vs. O3 based ALD dielectric

Abstract

By combining the capacitance and conductance analysis techniques, we obtained the Dit distribution throughout the band gap of In0.53Ga0.47As capacitors with H2O-based and O3-based ALD oxides. The choice of appropriate temperature to obtain the quasi-static C-V and the DC voltage sweep rate is an essential for the correct extraction of Dit. Simultaneously we obtained the trap kinetics characteristics. We claim that: (i) the H2O-based ALD deposition results in a fewer traps in the lower portion of In0.53Ga0.47As band gap, (ii) is related to the formation of the thicker native oxide in the O3-based samples; (iii) the mid gap traps in the H2O-based samples are significantly slower than those in the O3-based samples, which indicate their different nature.