{"title":"Gallium phosphide nanowires for optoelectronic devices","authors":"Umesh Rizal, B. Swain, B. S. Swain","doi":"10.1109/MICROCOM.2016.7522443","DOIUrl":null,"url":null,"abstract":"Gallium phosphide nanowires (GaP-NWs) were synthesized via oxide assisted growth mechanism in a chemical vapor deposition (CVD) and their optoelectronic properties were studied. The diameters of nanowires were in the range of 20-80 nm and lengths extended up to tens of micrometers. Raman spectra studies of GaP-NWs reveal broad and intense peaks at 364 and 398 cm-1 confirmed from transverse optic (TO) and longitudinal optics (LO) phonon. High resolution (HR) X-ray diffraction (XRD) reveals an addition peak that indicates presence of silicon in chemical network of GaP-NWs. Photoluminescence spectra shows intense PL peaks, indicating their potential applications in optoelectronic devices.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MICROCOM.2016.7522443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Gallium phosphide nanowires (GaP-NWs) were synthesized via oxide assisted growth mechanism in a chemical vapor deposition (CVD) and their optoelectronic properties were studied. The diameters of nanowires were in the range of 20-80 nm and lengths extended up to tens of micrometers. Raman spectra studies of GaP-NWs reveal broad and intense peaks at 364 and 398 cm-1 confirmed from transverse optic (TO) and longitudinal optics (LO) phonon. High resolution (HR) X-ray diffraction (XRD) reveals an addition peak that indicates presence of silicon in chemical network of GaP-NWs. Photoluminescence spectra shows intense PL peaks, indicating their potential applications in optoelectronic devices.
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