A DFT Study of the Structural, Electronic and Optical Properties of CsGeI2Br Halide Perovskite

F. Elfatouaki, A. Outzourhit, D. Abouelaoualim, E. Ibnouelghazi
{"title":"A DFT Study of the Structural, Electronic and Optical Properties of CsGeI2Br Halide Perovskite","authors":"F. Elfatouaki, A. Outzourhit, D. Abouelaoualim, E. Ibnouelghazi","doi":"10.1109/redec49234.2020.9163864","DOIUrl":null,"url":null,"abstract":"Halide inorganic perovskites have caused great concern owing to their greater electronic and optical properties which can be illustrated briefly by high charge carrier mobility and tunable band gap. During this work, we studied the electronic and optical properties of tetragonal phase of CsGeI2 Br perovskites using ab-initio techniques, most of which are based on the DFT density functional theory. The local density approximation (LDA)and generalized gradient approximation (GGA) of Perdew Burke Ernzehrof (PBE) are used to evaluate the exchange correlation potential. DFT has been applied to analyze the structural stability, band structure and density of states (DOS). Besides, the dielectric function and Absorption coefficient are determined.","PeriodicalId":371125,"journal":{"name":"2020 5th International Conference on Renewable Energies for Developing Countries (REDEC)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th International Conference on Renewable Energies for Developing Countries (REDEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/redec49234.2020.9163864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Halide inorganic perovskites have caused great concern owing to their greater electronic and optical properties which can be illustrated briefly by high charge carrier mobility and tunable band gap. During this work, we studied the electronic and optical properties of tetragonal phase of CsGeI2 Br perovskites using ab-initio techniques, most of which are based on the DFT density functional theory. The local density approximation (LDA)and generalized gradient approximation (GGA) of Perdew Burke Ernzehrof (PBE) are used to evaluate the exchange correlation potential. DFT has been applied to analyze the structural stability, band structure and density of states (DOS). Besides, the dielectric function and Absorption coefficient are determined.
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CsGeI2Br卤化物钙钛矿结构、电子和光学性质的DFT研究
卤化物无机钙钛矿由于其较高的电子和光学性质而引起了人们的极大关注,这可以通过高载流子迁移率和可调带隙来简单说明。在本工作中,我们利用ab-initio技术研究了csgei2br钙钛矿四方相的电子和光学性质,其中大部分是基于DFT密度泛函理论。利用Perdew - Burke - Ernzehrof (PBE)的局部密度近似(LDA)和广义梯度近似(GGA)对交换相关势进行了估计。应用离散傅里叶变换分析了结构稳定性、能带结构和态密度(DOS)。测定了介质的介电函数和吸收系数。
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