GaAs IC reliability, the next generation

W. Roesch
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引用次数: 6

Abstract

Improvements in semiconductor reliability are constantly being expected and so far, they have been achieved. A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MESFET integrated circuits, in particular. Comparisons to silicon reliability history, and between old and new philosophies are made. Although not intended as a panacea, the direction towards measuring, analyzing, and controlling the variability of all input parameters to reliability is discussed as the key to reaching the next generation.<>
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GaAs集成电路可靠性,下一代
人们一直期待半导体可靠性的提高,到目前为止,它们已经实现了。从历史的角度来看,它提供了关于人们思考可靠性的方式的变化的证据,特别是对于GaAs MESFET集成电路。比较硅的可靠性历史,并在新旧哲学之间。虽然不是万能药,但测量、分析和控制所有输入参数对可靠性的可变性的方向是讨论达到下一代的关键。
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