Evaluation of Ga-Sn-O films fabricated using mist chemical vapor deposition

Abstract

We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution changes, the resistance also changes. The sheet resistance is lower for Ga : Sn = 1 : 2. Finally, at least one example, the measured value does not match the expectancy. As a result, we have to conclude that the electrical qualities of the GTO films are quite different for the different film thickness.