Direct-Write Deposition of PZT Thick Films Derived from Modified Sol-Gel Process

J. Sun, M. Vittadello, E. K. Akdoğan, A. Hall, N. M. Hagh, A. Safari
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引用次数: 2

Abstract

Lead zirconate titanate (PZT) thick films (6-70 mum) have been deposited on platinum coated alumina and silicon substrates using Micropentrade direct-write technique. Feedstock materials for Micropen deposition have been prepared by a modified sol-gel process in which different amounts of commercial PZT powder (15, 20, 25, 30 vol%) were dispersed in a stable PZT sol to achieve low temperature heat treatment conditions (700degC). The effects of the substrate, intermediate sol layer, film thickness, PZT content, and Micropen parameters on the resulting multi-layer PZT films have been investigated. The films using 15 vol% paste on Pt/Si substrate showed dielectric constant in the range 540-870, dielectric loss between 4.1 and 4.5 % at 1 kHz, remanent polarization (Pr) of 7-12 muC/cm2, and coercive field (Ec) of 24-30 kV/cm.
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溶胶-凝胶法制备PZT厚膜的直接写入沉积
采用Micropentrade直接写入技术在铂涂层氧化铝和硅衬底上制备了锆钛酸铅(PZT)厚膜(6-70 μ m)。采用改进的溶胶-凝胶工艺制备了Micropen沉积的原料,其中不同量的PZT粉末(15、20、25、30 vol%)分散在稳定的PZT溶胶中,以达到低温热处理条件(700℃)。研究了衬底、中间溶胶层、薄膜厚度、PZT含量和Micropen参数对多层PZT薄膜的影响。在Pt/Si衬底上使用15 vol%浆料制备的薄膜介电常数在540 ~ 870之间,1 kHz时介电损耗在4.1 ~ 4.5%之间,剩余极化(Pr)为7 ~ 12 muC/cm2,矫顽力场(Ec)为24 ~ 30 kV/cm。
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