Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387853
Li Ling-zhi, Xiao Ding-quan, Zhu Jian-guo, Lin Dun-min, Yu Ping, Wu Jiagang
[Bi0.5(Nai1-x-yKxLiy)0.5]TiO3 (BNKLT) lead-free piezoelectric ceramics invented in authors' group were used for making of two kinds of middle frequency ceramic filters. The BNKLT ceramics was fabricated into the single disc for middle frequency filter with the center frequency being about 530 kHz by using the skeletal vibration mode. The loss insertion is about 3 dB, and the bandwidth is about 8.8 kHz. It was obtained that the filter has sharp upper and lower cut off frequencies. The BNKLT ceramics was also fabricated into the multi-section ladder for pass-band filter with the center frequency about 460 kHz by using the full electrode radial vibration mode of the resonance samples. The band-pass filter also has sharp upper and lower cut off frequencies with the curve smooth, and the loss insertion less than 6 dB and the out-band attenuation more than 30 dB.
{"title":"Fabrication and Properties of Middle Frequency Filters by Using [Bi0.5(Na1-x-yKxLiy)0.5]TiO3 Lead-free Piezoelectric Ceramics","authors":"Li Ling-zhi, Xiao Ding-quan, Zhu Jian-guo, Lin Dun-min, Yu Ping, Wu Jiagang","doi":"10.1109/ISAF.2006.4387853","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387853","url":null,"abstract":"[Bi0.5(Nai1-x-yKxLiy)0.5]TiO3 (BNKLT) lead-free piezoelectric ceramics invented in authors' group were used for making of two kinds of middle frequency ceramic filters. The BNKLT ceramics was fabricated into the single disc for middle frequency filter with the center frequency being about 530 kHz by using the skeletal vibration mode. The loss insertion is about 3 dB, and the bandwidth is about 8.8 kHz. It was obtained that the filter has sharp upper and lower cut off frequencies. The BNKLT ceramics was also fabricated into the multi-section ladder for pass-band filter with the center frequency about 460 kHz by using the full electrode radial vibration mode of the resonance samples. The band-pass filter also has sharp upper and lower cut off frequencies with the curve smooth, and the loss insertion less than 6 dB and the out-band attenuation more than 30 dB.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114993585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387825
Junling Wang, Jiangong Cheng, L. Tian, T. Dechakupt, S. Trolier-McKinstry
Low temperature crystallization of chemical solution derived Bi1.5Zn0.5Nb1.5O6.5 films by using pulsed laser annealing was achieved. The effects of laser energy density, irradiation time and film thickness on the sample structure and electrical properties were systematically studied. Crystallized films were obtained with laser irradiation at room temperature, but laser induced defects degrade the dielectric strength of the film and increase the dielectric loss. It was found that the crystallinity and dielectric properties were significantly improved after a post-annealing at 400degC for 2 h in oxygen atmosphere. Bi1.5Zn0.5Nb1.5O6.5 films with dielectric properties comparable to that of rapid thermal annealed samples were achieved at temperatures les 400degC, which makes integration with polymeric substrates possible.
{"title":"Low Temperature Crystallization of Bismuth Zinc Niobate Thin Films by Pulsed Laser Annealing","authors":"Junling Wang, Jiangong Cheng, L. Tian, T. Dechakupt, S. Trolier-McKinstry","doi":"10.1109/ISAF.2006.4387825","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387825","url":null,"abstract":"Low temperature crystallization of chemical solution derived Bi1.5Zn0.5Nb1.5O6.5 films by using pulsed laser annealing was achieved. The effects of laser energy density, irradiation time and film thickness on the sample structure and electrical properties were systematically studied. Crystallized films were obtained with laser irradiation at room temperature, but laser induced defects degrade the dielectric strength of the film and increase the dielectric loss. It was found that the crystallinity and dielectric properties were significantly improved after a post-annealing at 400degC for 2 h in oxygen atmosphere. Bi1.5Zn0.5Nb1.5O6.5 films with dielectric properties comparable to that of rapid thermal annealed samples were achieved at temperatures les 400degC, which makes integration with polymeric substrates possible.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114998521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387841
B. Guiffard, R. German, L. Seveyrat, G. Sebald, A. Benayad, D. Guyomar
In this study, electric field-induced thickness strain of pure polyurethane (PU), carbon black C/PU composite and ferroelectric PZT/PU composite have been compared. The three compositions have been submitted to whether a bipolar electric field (0.1 Hz), whether a voltage step. Both C and PZT loading improves the strain of the pure polymer matrix. However, PZT filling yields the highest dynamic strain amplitude (-8.1%) achieved for a field of 13.3 kV/mm. For a given field value, the static strain amplitude obtained after a voltage step is nearly equal to the dynamic strain amplitude. The measurement of voltage step-induced current allowed to determine the constant current-voltage (I-V) characteristics of the three compositions and revealed that predominant space charge limited current occurs in the PZT/PU, whereas three different charge transport mechanisms are activated in the pure and C/PU films, depending on the voltage range. These two distinct electrical behaviors may indicate a difference in the trapping ability owing to the presence of shallow traps in PZT/PU and deeper traps in C/PU and especially in pure PU, which could be at the origin of the larger deformations observed for PZT/PU.
{"title":"Electromechanical Behavior Of Two Phase Non Percolative Composites: Comparison Between Carbon Black / Polyurethane And PZT / Polyurethane Films","authors":"B. Guiffard, R. German, L. Seveyrat, G. Sebald, A. Benayad, D. Guyomar","doi":"10.1109/ISAF.2006.4387841","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387841","url":null,"abstract":"In this study, electric field-induced thickness strain of pure polyurethane (PU), carbon black C/PU composite and ferroelectric PZT/PU composite have been compared. The three compositions have been submitted to whether a bipolar electric field (0.1 Hz), whether a voltage step. Both C and PZT loading improves the strain of the pure polymer matrix. However, PZT filling yields the highest dynamic strain amplitude (-8.1%) achieved for a field of 13.3 kV/mm. For a given field value, the static strain amplitude obtained after a voltage step is nearly equal to the dynamic strain amplitude. The measurement of voltage step-induced current allowed to determine the constant current-voltage (I-V) characteristics of the three compositions and revealed that predominant space charge limited current occurs in the PZT/PU, whereas three different charge transport mechanisms are activated in the pure and C/PU films, depending on the voltage range. These two distinct electrical behaviors may indicate a difference in the trapping ability owing to the presence of shallow traps in PZT/PU and deeper traps in C/PU and especially in pure PU, which could be at the origin of the larger deformations observed for PZT/PU.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116738049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387863
E. K. Akdoğan, W. Simon, A. Safari
Nonlinear dielectric response of (Ba0.60 Sr0.40)TiO3 epitaxial films on <100> and <110>-oriented NdGaO3 substrates were investigated as a function of film thickness. The second, fourth and sixth order permittivities were determined at 10 GHz and at room temperature from which the so-called critical field for maximum tunability was computed using a thermodynamic formalism recently developed by the authors along the principal residual misfit strain directions. It is shown that the critical field is anisotropic in the plane of the film and its magnitudes are governed by the film thickness.
{"title":"Nonlinear Dielectric Properties of (Ba0.60, Sr0.40)TiO3 Thin Films with Anisotropic Epitaxy","authors":"E. K. Akdoğan, W. Simon, A. Safari","doi":"10.1109/ISAF.2006.4387863","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387863","url":null,"abstract":"Nonlinear dielectric response of (Ba0.60 Sr0.40)TiO3 epitaxial films on <100> and <110>-oriented NdGaO3 substrates were investigated as a function of film thickness. The second, fourth and sixth order permittivities were determined at 10 GHz and at room temperature from which the so-called critical field for maximum tunability was computed using a thermodynamic formalism recently developed by the authors along the principal residual misfit strain directions. It is shown that the critical field is anisotropic in the plane of the film and its magnitudes are governed by the film thickness.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120939015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387861
Cheng‐Shong Hong, S. Chu, Wen-Chang Su, R. Chang, H. Nien, Y. Juang
In this paper, we systematically present the physical and mathematical meanings of the parameters used in Burfoot et al.'s and Eiras et al.'s model. Based on our experimental results in (l-x)PFW-xPT relaxor system and the theoretically modelling results, it is shown that the parameter values in Burfoot et al.'s model and Eiras et al.'s model have not any variations after normalizing the maximum dielectric constant and shifting the temperature of the maximum dielectric constant Tm. It is also shown that the parameters in Eiras et al.'s model have better physical and mathematical meanings.
{"title":"Dielectric Behavior of PFW-PT Relaxors: Model-Parameters Extraction","authors":"Cheng‐Shong Hong, S. Chu, Wen-Chang Su, R. Chang, H. Nien, Y. Juang","doi":"10.1109/ISAF.2006.4387861","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387861","url":null,"abstract":"In this paper, we systematically present the physical and mathematical meanings of the parameters used in Burfoot et al.'s and Eiras et al.'s model. Based on our experimental results in (l-x)PFW-xPT relaxor system and the theoretically modelling results, it is shown that the parameter values in Burfoot et al.'s model and Eiras et al.'s model have not any variations after normalizing the maximum dielectric constant and shifting the temperature of the maximum dielectric constant Tm. It is also shown that the parameters in Eiras et al.'s model have better physical and mathematical meanings.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114150842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387871
J. Yoo, Kookjin Kim, Chang-Bae Lee, D. Paik, H. Yoon, Jaeil Hong
Multilayer piezoelectric transformers (MPT) were manufactured using PZN-PMN-PZT ceramics and their electrical properties were then investigated according to frequency and load resistance. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value in the vicinity of 73 kHz and increased according to the increase of load resistance. When the output impedance coincided with the load resistance, the piezoelectric transformer showed the temperature rise of about 21degC at the output power of 15 W. The multilayer piezoelectric transformer manufactured at low cofiring temperature of ~940degC using PZN-PMN-PZT ceramics could be stably driven as the step-up or down transformers.
{"title":"Electrical Properties of Step-down Multilayer Piezoelectric Transformer for AC-DC converter","authors":"J. Yoo, Kookjin Kim, Chang-Bae Lee, D. Paik, H. Yoon, Jaeil Hong","doi":"10.1109/ISAF.2006.4387871","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387871","url":null,"abstract":"Multilayer piezoelectric transformers (MPT) were manufactured using PZN-PMN-PZT ceramics and their electrical properties were then investigated according to frequency and load resistance. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value in the vicinity of 73 kHz and increased according to the increase of load resistance. When the output impedance coincided with the load resistance, the piezoelectric transformer showed the temperature rise of about 21degC at the output power of 15 W. The multilayer piezoelectric transformer manufactured at low cofiring temperature of ~940degC using PZN-PMN-PZT ceramics could be stably driven as the step-up or down transformers.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122147708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387866
M. Tyunina, J. Levoska, I. Jaakola
Heterostructures of thin-film perovskite ferroelectrics and relaxors were grown by in situ pulsed laser deposition on La0.5Sr0.5CoO3/MgO and Pt/sapphire. The dielectric response of the heterostructures was measured as a function of frequency, temperature, amplitude of ac field, magnitude of dc field, and varying the measurement rate. In the ferroelectric state, the existence of ferroelectric domains and the fast change of their configuration were found to determine the dynamic dielectric nonlinearity and the dc dielectric hysteresis. In thin-film relaxors, the dynamic dielectric nonlinearity was shown to be related to the orientation of the randomly interacting dipoles in a random field. No indications of the domain-type dynamics were detected even at low temperatures and/or under an applied dc field. A possible relaxational mechanism responsible for the dielectric hysteresis in thin-film relaxors is suggested and discussed. In thin-film (Ba,Sr)TiO3, a relaxational high-temperature dielectric hysteresis was observed.
{"title":"Dielectric Hysteresis in Thin-Film Ferroelectrics and Relaxors","authors":"M. Tyunina, J. Levoska, I. Jaakola","doi":"10.1109/ISAF.2006.4387866","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387866","url":null,"abstract":"Heterostructures of thin-film perovskite ferroelectrics and relaxors were grown by in situ pulsed laser deposition on La0.5Sr0.5CoO3/MgO and Pt/sapphire. The dielectric response of the heterostructures was measured as a function of frequency, temperature, amplitude of ac field, magnitude of dc field, and varying the measurement rate. In the ferroelectric state, the existence of ferroelectric domains and the fast change of their configuration were found to determine the dynamic dielectric nonlinearity and the dc dielectric hysteresis. In thin-film relaxors, the dynamic dielectric nonlinearity was shown to be related to the orientation of the randomly interacting dipoles in a random field. No indications of the domain-type dynamics were detected even at low temperatures and/or under an applied dc field. A possible relaxational mechanism responsible for the dielectric hysteresis in thin-film relaxors is suggested and discussed. In thin-film (Ba,Sr)TiO3, a relaxational high-temperature dielectric hysteresis was observed.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"23 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134013566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387892
E. Leder, T. Hegewald, M. Kaltenbacher, R. Lerch
A metrological approach for the determination of effective material parameters for piezoelectric multilayer actuators is presented. The elastic, dielectric and coupling constants s33 E, epsiv33 S , epsiv33 T, e33 and d33 are determined systematically for different constellations of mechanical and electrical prestress and sinusoidal excitation. Device losses are taken into account by treating all parameters as complex valued. Clamping the observed actuator with constant strain or constant stress is achieved with an active measurement setup. The results of the material parameters are fitted with n-dimensional taylor expansions. We show the accordance of these functions with the measured material parameters. The paper concludes with results from the determined functional dependencies and a compare with material parameters of the bulk material.
{"title":"Determination of Effective Material Parameters for Piezoelectric Multilayer Actuators","authors":"E. Leder, T. Hegewald, M. Kaltenbacher, R. Lerch","doi":"10.1109/ISAF.2006.4387892","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387892","url":null,"abstract":"A metrological approach for the determination of effective material parameters for piezoelectric multilayer actuators is presented. The elastic, dielectric and coupling constants s33 E, epsiv33 S , epsiv33 T, e33 and d33 are determined systematically for different constellations of mechanical and electrical prestress and sinusoidal excitation. Device losses are taken into account by treating all parameters as complex valued. Clamping the observed actuator with constant strain or constant stress is achieved with an active measurement setup. The results of the material parameters are fitted with n-dimensional taylor expansions. We show the accordance of these functions with the measured material parameters. The paper concludes with results from the determined functional dependencies and a compare with material parameters of the bulk material.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129585108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387842
Kwang-ho Kim, Sang-Hyun Jeong, Haeng-Chul Choi, Soon-Won Jung, Jae‐Hyun Kim
Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, 0.002 Omegaldrcm) using by spin coating method. A 1-5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000-4000 rpm for 2~30 seconds. After annealing in a vacuum ambient at 100~200degC for 60 min, upper aluminum, gold and platinum electrodes were deposited for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had beta-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization (Pr) and coercive filed (EC) values were about 5.8 muC/cm2 and 470 kV/cm, respectively, in an applied electric field of plusmn 1 MV/cm. The measured switching times (tsw) was less than 20 ns. The leakage current densities measured at room temperature was less than 1 times 10-6 A/cm2 under a field of 1 MV/cm.
{"title":"Properties of MFS Structures Using Ferroelectric VF2-TrFE Copolymer Film Gate","authors":"Kwang-ho Kim, Sang-Hyun Jeong, Haeng-Chul Choi, Soon-Won Jung, Jae‐Hyun Kim","doi":"10.1109/ISAF.2006.4387842","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387842","url":null,"abstract":"Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, 0.002 Omegaldrcm) using by spin coating method. A 1-5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000-4000 rpm for 2~30 seconds. After annealing in a vacuum ambient at 100~200degC for 60 min, upper aluminum, gold and platinum electrodes were deposited for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had beta-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization (Pr) and coercive filed (EC) values were about 5.8 muC/cm2 and 470 kV/cm, respectively, in an applied electric field of plusmn 1 MV/cm. The measured switching times (tsw) was less than 20 ns. The leakage current densities measured at room temperature was less than 1 times 10-6 A/cm2 under a field of 1 MV/cm.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130430860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387820
I. Burn
It has been reported that fluorine ions (F-) can substitute for oxygen ions (O2-) in small amounts in barium titanate and act as electron donors. While fluorine is not usually an impurity in barium titanate, this work suggests that ions such as Cl- or (OH)-, that can be impurities, might behave similarly to F-. Cl- ions can be present in barium titanate made using barium chloride and/or titanium chloride, as in the oxalate process. Hydroxyl ions are common in barium titanate made by the hydrothermal or alkoxide processes. Other common impurities in barium titanate, such as Mg2+, Al3+, Fe3+, or Na+, are believed to behave as electron acceptors and induce "extrinsic" oxygen vacancies in the Ba2+Ti4+O3 crystal structure for charge balance. Acceptor impurities are minimized in the manufacture of barium titanate because the presence of oxygen vacancies can degrade the reliability of multilayer ceramic capacitors (MLC's) when the barium titanate is used in thin dielectric layers with Ni electrodes. In this paper we consider the possibility that anion donors, particularly (OH)-, might counteract the effect of minor levels of acceptor impurities and have a beneficial effect on the performance of MLC's with Ni electrodes and thin dielectric layers.
{"title":"The Role of Anion Impurities in Barium Titanate","authors":"I. Burn","doi":"10.1109/ISAF.2006.4387820","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387820","url":null,"abstract":"It has been reported that fluorine ions (F<sup>-</sup>) can substitute for oxygen ions (O<sup>2-</sup>) in small amounts in barium titanate and act as electron donors. While fluorine is not usually an impurity in barium titanate, this work suggests that ions such as Cl<sup>-</sup> or (OH)<sup>-</sup>, that can be impurities, might behave similarly to F<sup>-</sup>. Cl<sup>-</sup> ions can be present in barium titanate made using barium chloride and/or titanium chloride, as in the oxalate process. Hydroxyl ions are common in barium titanate made by the hydrothermal or alkoxide processes. Other common impurities in barium titanate, such as Mg<sup>2+</sup>, Al<sup>3+</sup>, Fe<sup>3+</sup>, or Na<sup>+</sup>, are believed to behave as electron acceptors and induce \"extrinsic\" oxygen vacancies in the Ba<sup>2+</sup>Ti<sup>4+</sup>O<sub>3</sub> crystal structure for charge balance. Acceptor impurities are minimized in the manufacture of barium titanate because the presence of oxygen vacancies can degrade the reliability of multilayer ceramic capacitors (MLC's) when the barium titanate is used in thin dielectric layers with Ni electrodes. In this paper we consider the possibility that anion donors, particularly (OH)<sup>-</sup>, might counteract the effect of minor levels of acceptor impurities and have a beneficial effect on the performance of MLC's with Ni electrodes and thin dielectric layers.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127886435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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