{"title":"Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem","authors":"K. Petrosyants, M. Kozhukhov, Dmitry Popov","doi":"10.1109/DDECS.2019.8724651","DOIUrl":null,"url":null,"abstract":"A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI’s components. The causes of device parameter degradation were discussed.","PeriodicalId":197053,"journal":{"name":"2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2019.8724651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI’s components. The causes of device parameter degradation were discussed.
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