B. Kaczer, R. Degraeve, A. De Keersgieter, K. Van de Mieroop, T. Bearda, G. Groeseneken
{"title":"Consistent model for short-channel nMOSFET post-hard-breakdown characteristics","authors":"B. Kaczer, R. Degraeve, A. De Keersgieter, K. Van de Mieroop, T. Bearda, G. Groeseneken","doi":"10.1109/VLSIT.2001.934979","DOIUrl":null,"url":null,"abstract":"We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.","PeriodicalId":232773,"journal":{"name":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2001.934979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.
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