Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses

Han-Wen Liu, Chien-hung Lin, Fang-Hsing Wang
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引用次数: 2

Abstract

The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.
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直流偏置应力下氢化非晶硅薄膜晶体管阈值电压退化的恢复特性
研究了直流偏置条件下氢化非晶硅薄膜晶体管(a-Si:H TFTs)阈值电压的恢复特性。无论是正栅偏应力还是负栅偏应力,在第v次退化中都存在恢复现象。应力电压值越大,Vth恢复量越大。由于氮化硅薄膜内空穴捕获中心的能级低于电子的能级,负栅极偏置应力下的a-Si:H tft的Vth回收量大于正栅极偏置应力下的tft。
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