Simulation and experiment of inverted pyramid DBD micro-plasma devices array for maskless nanoscale etching

Yichuan Dai, L. Wen, Jie Liu, Hai Wang
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Abstract

A novel maskless nanoscale material etching method based on microcavities dielectric barrier discharge (DBD) array with advantages of high accuracy and high efficiency has been proposed in this paper. A two-dimensional simulation of pyramidal hollow cathode DBD microplasma operated in Ar has been studied using FEM method. Results indicated that high density microplasma with its magnitude of 1e18/m3 is obtained in microcavity. Total absorbed power enhance as relative permittivity of dielectric layer increased. A 3×3 50μm inverted pyramidal microplasma array without dielectric layer has been successfully fabricated by MEMS process and discharged stably in 10kPa Ar, which may lay a good foundation of ongoing DBD microplasma devices array and future maskless nanoscale etching.
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无掩模纳米蚀刻用倒金字塔DBD微等离子体器件阵列的仿真与实验
提出了一种基于微腔介质阻挡放电(DBD)阵列的新型无掩膜纳米材料刻蚀方法,该方法具有高精度和高效率的优点。采用有限元方法对锥体空心阴极DBD微等离子体在氩气中的二维模拟进行了研究。结果表明,在微腔中可获得密度为1e18/m3的高密度微等离子体。总吸收功率随着介质层相对介电常数的增大而增大。利用MEMS工艺成功制备了3×3 50μm无介电层倒金字塔型微等离子体阵列,并在10kPa氩气条件下稳定放电,为DBD微等离子体阵列和未来无掩膜纳米刻蚀奠定了良好的基础。
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