Device design and analysis of logic circuits and SRAMs for Germanium FinFETs on SOI and bulk substrates

V. Hu, M. Fan, P. Su, C. Chuang
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引用次数: 2

Abstract

A comparative analysis of Germanium-on-Insulator FinFET (GeOI FinFET) and Germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit level with respect to Si counterparts is presented. GeOI FinFET shows larger leakage current than Ge bulk FinFET due to the parasitic bipolar effect triggered by the band-to-band tunneling (BTBT) leakage. The effectiveness of different dual-Vt technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed for GeOI and Ge bulk FinFET circuits and SRAMs. An optimum asymmetric underlap design in SRAM using asymmetric underlap pull-up and access transistors (PUAX-asym) is proposed. GeOI and Ge bulk FinFETs with asymmetric underlap design show significant improvement in leakage-delay performance and stability in logic circuits and SRAM cells.
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基于SOI和块状衬底的锗finfet逻辑电路和sram的器件设计与分析
比较分析了绝缘体上锗FinFET (GeOI FinFET)和体基上锗FinFET (Ge bulk FinFET)在器件和电路水平上与硅FinFET的对比。由于带间隧穿(BTBT)泄漏引发的寄生双极效应,GeOI FinFET的泄漏电流比Ge体FinFET大。分析了不同双vt技术选项的有效性,包括增加通道掺杂,增加栅极长度和漏极侧underlap以减少泄漏,用于GeOI和Ge体FinFET电路和sram。提出了一种基于非对称下接上拉和接入晶体管(PUAX-asym)的SRAM非对称下接优化设计。采用非对称下包设计的GeOI和Ge体finfet在逻辑电路和SRAM单元中的泄漏延迟性能和稳定性方面有显著改善。
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