M. Wong, U. Singisetti, Jing Lu, J. Speck, U. Mishra
{"title":"Anomalous output conductance in N-polar GaN-based MIS-HEMTs","authors":"M. Wong, U. Singisetti, Jing Lu, J. Speck, U. Mishra","doi":"10.1109/DRC.2011.5994502","DOIUrl":null,"url":null,"abstract":"We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.