Investigations of capacitively-coupled plasmas by electrostatic probe technique

G. Cirino, R. M. Castro, M. Pisani, P. Verdonck, R. Mansano, M. Massi, R. Pessoa, L. Barea, T. M. Brahim, H. Maciel
{"title":"Investigations of capacitively-coupled plasmas by electrostatic probe technique","authors":"G. Cirino, R. M. Castro, M. Pisani, P. Verdonck, R. Mansano, M. Massi, R. Pessoa, L. Barea, T. M. Brahim, H. Maciel","doi":"10.1109/SBMICRO.2015.7298131","DOIUrl":null,"url":null,"abstract":"This work reports on the electric characterization of capacitively-coupled RF plasmas by employing electrostatic (Langmuir) probes. Experiments with argon, oxygen and sulfur hexafluoride (SF6) plasmas were carried out. The floating potential and cathode self-bias, as well as the shape of the Langmuir probe current-voltage characteristics were measured and interpreted. The current-voltage characteristic for SF6 plasmas showed a strong variation in the floating potential, and a distortion in the region of electron retarding. An unexpected behavior of the curves was observed for the higher pressure discharge regime, at 100 mTorr. The cathode self-bias also was very different for SF6 plasmas when compared to more electropositive oxygen and argon discharges. The results obtained pointed to the massive presence of negative ions in SF6 plasmas.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This work reports on the electric characterization of capacitively-coupled RF plasmas by employing electrostatic (Langmuir) probes. Experiments with argon, oxygen and sulfur hexafluoride (SF6) plasmas were carried out. The floating potential and cathode self-bias, as well as the shape of the Langmuir probe current-voltage characteristics were measured and interpreted. The current-voltage characteristic for SF6 plasmas showed a strong variation in the floating potential, and a distortion in the region of electron retarding. An unexpected behavior of the curves was observed for the higher pressure discharge regime, at 100 mTorr. The cathode self-bias also was very different for SF6 plasmas when compared to more electropositive oxygen and argon discharges. The results obtained pointed to the massive presence of negative ions in SF6 plasmas.
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用静电探针技术研究电容耦合等离子体
本文报道了利用静电(朗缪尔)探针对电容耦合射频等离子体的电特性。用氩、氧和六氟化硫(SF6)等离子体进行了实验。对浮电位和阴极自偏置以及Langmuir探针的形状进行了测量和解释。SF6等离子体的电流-电压特性在浮动电位中表现出强烈的变化,并且在电子延迟区出现畸变。在100 mTorr的高压放电状态下,观察到曲线的意外行为。与氧和氩放电相比,SF6等离子体的阴极自偏置也有很大不同。结果表明SF6等离子体中大量存在负离子。
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