{"title":"A printable form of single crystal silicon for high performance thin film transistors on plastic","authors":"E. Menard, D. Khang, K. Lee, R. Nuzzo, J. Rogers","doi":"10.1109/DRC.2004.1367816","DOIUrl":null,"url":null,"abstract":"This talk describes the fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon. These elements are fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon, and then lifting off the silicon. A large collection of such objects - which can have geometries that range from ribbons to platelets, sheets, disks and other shapes - constitutes a type of material, which we refer to as microstructured silicon (ps-Si), that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This talk describes the fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon. These elements are fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon, and then lifting off the silicon. A large collection of such objects - which can have geometries that range from ribbons to platelets, sheets, disks and other shapes - constitutes a type of material, which we refer to as microstructured silicon (ps-Si), that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.