K. Hayat, A. Kashif, S. Azam, T. Mehmood, M. Imran
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引用次数: 10
Abstract
This paper presents the design and characterization of a GaN HEMT based class-AB power amplifier (PA) for L-band radar applications at 1.3 GHz. The aim of this paper is to design and develop a 30 Watt PA together with high efficiency, small in size and low-cost solution. The source and load impedances have been extracted by performing source and load-pull for attaining an optimal performance of class-AB PA. The fabricated PA provides an RF power of 45.5 dBm at 1-dB compression point. The power added efficiency (PAE) of 63% is achieved together with power gain of 13.5 dB at desired frequency.
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