Microfabricated Aluminum Nitride MEMS Resonator

Abstract

In this paper, a piezoelectric MEMS resonator is presented working as laterally vibrating resonator. The device is microfabricated with the SOI silicon wafer and piezoelectric aluminum nitride (A1N) thin films. The rectangular resonant plate was supported with two beams and the gap from the silicon substrate is 2 $\mu$m. Molybdenum (Mo) interdigitated electrodes (IDEs) is fabricated on the top of A1N piezoelectric film. The resonant frequency of the resonator is 276 MHz, Q factor is 362.