Analog signal path circuit for a four transistor pixel in standard 0.13μm CMOS technology

Suhaidi bin Shafie, N. A. M. Yunus, Ong Wei Chiek, W. C. Yew, I. Halin
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Abstract

This project is aimed to develop the layout for the analog signal path of a 4 transistor pixel CMOS image sensor using EDA tools in standard 0.13μm Silterra fabrication technology. The sub-circuit blocks that define the analog input-output path consists of the 320×240 pixel array, 320 column parallel correlated double sampling circuits, an output buffer amplifier and all associated bias circuitry. Each pixel size has a dimension of 10μm × 10μm. The pixel's frame rate is targeted to be 120 frames per second (fps) working in a QVGA picture format (320× 240 pixels). From simulation, the illumination range of 0.01 lux to 0.25 lux has been tested and shows only a 2.8% error from the ideal output linearity.
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模拟信号路径电路的四晶体管像素在标准0.13μm CMOS技术
该项目旨在使用标准0.13μm Silterra制造技术的EDA工具开发4晶体管像素CMOS图像传感器的模拟信号路径布局。定义模拟输入输出路径的子电路模块由320×240像素阵列、320列并行相关双采样电路、输出缓冲放大器和所有相关偏置电路组成。每个像素尺寸为10μm × 10μm。在QVGA图像格式(320× 240像素)下,像素的帧率目标为每秒120帧(fps)。通过仿真,测试了0.01勒克斯到0.25勒克斯的照明范围,与理想输出线性度的误差仅为2.8%。
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