Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects

N. Matsunaga, H. Shibata, K. Hashimoto
{"title":"Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects","authors":"N. Matsunaga, H. Shibata, K. Hashimoto","doi":"10.1109/VLSIT.1992.200652","DOIUrl":null,"url":null,"abstract":"A study to characterize the electromigration behavior in quarter-micron lines is discussed. An increase of activation energy (E/sub a/) with reduction of line width has been experimentally observed. It was also found that there is a region where the lifetime degrades in spite of an increase in E/sub a/ as line width is reduced. This degradation is caused by current crowding and joule-heating around voids that exist before current stressing. According to the electromigration model, a larger grain size and higher","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A study to characterize the electromigration behavior in quarter-micron lines is discussed. An increase of activation energy (E/sub a/) with reduction of line width has been experimentally observed. It was also found that there is a region where the lifetime degrades in spite of an increase in E/sub a/ as line width is reduced. This degradation is caused by current crowding and joule-heating around voids that exist before current stressing. According to the electromigration model, a larger grain size and higher
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应力诱导空洞形成对四分之一微米铝互连电迁移耐久性的影响
讨论了表征四分之一微米线中电迁移行为的研究。实验观察到,随着线宽的减小,活化能(E/sub a/)增加。还发现,尽管E/sub - a/随线宽的减小而增加,但存在一个寿命下降的区域。这种退化是由电流拥挤和焦耳加热引起的,在电流应力之前存在的空隙周围。根据电迁移模型,晶粒尺寸越大,温度越高
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