{"title":"A 70-V, 90-m/spl Omega/ mm/sup 2/, high-speed double-layer gate UMOSFET realized by selective CVD tungsten","authors":"S. Matsumoto, F. Yoshino, H. Ishii, T. Ohno","doi":"10.1109/ISPSD.1994.583785","DOIUrl":null,"url":null,"abstract":"Selective CVD is used to develop a low on-resistance, high-speed UMOSFET with a new double-layer gate electrode made of tungsten. The experimental UMOSFET has an active device area of 1 mm/sup 2/, an on-resistance of 90 m/spl Omega/ and a breakdown voltage of 70 V. Its corner frequency (-3 dB)is extended to 2.14 MHz. This value is 1.8 times higher than that of a conventional poly-Si-gate UMOSFET.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Selective CVD is used to develop a low on-resistance, high-speed UMOSFET with a new double-layer gate electrode made of tungsten. The experimental UMOSFET has an active device area of 1 mm/sup 2/, an on-resistance of 90 m/spl Omega/ and a breakdown voltage of 70 V. Its corner frequency (-3 dB)is extended to 2.14 MHz. This value is 1.8 times higher than that of a conventional poly-Si-gate UMOSFET.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
