Long term transients in MOSFEG 1/f noise under switched bias conditions

Abstract

Klumperink et al.,[1] have recently had a number of publications on the low frequency noise of n-channel MOSFET's under switched gate bias conditions. We have also previously investigated the same type of devices, older 5 micron commercial devices, under the same type of switched bias conditions and have independently confirmed these prior results. There is an anomalous reduction in I/f noise at frequencies two orders of magnitude below the switching frequency.[2] The reduction occurs only when holes are accumulated at the surface under the gate when the transistor is off during the switched bias. We have also investigated the time dependence of switched bias 1/f noise and have discovered long term time dependent transients in the I/f noise.[3]