Monte Carlo simulation of MBE and oxidation of porous silicon surface for production nanochannel membranes

Abstract

Possibility to decrease nanochannel diameters up to one nanometer was demonstrated by Monte Carlo simulation of molecular beam epitaxy on nanochannel surface with following thermal oxidation. Study of atomic processes on porous Si(111) substrates was carried out. In wide range of deposition parameters the rate of nanochannel inlet size decrease was estimated to be 0.13 – 0.15 nm/ML. Optimal conditions for silicon deposition on membrane surface were determined: substrate temperature - from 520 to 700 K, and silicon flux intensity of 10−2 − 10 ML/s. Simulation of nanochannel membranes oxidation in oxygen flux revealed that effect of channel inlet size decreasing due oxidation was insignificant.