Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

S. Miryala, V. Tenace, A. Calimera, E. Macii, M. Poncino, L. Amarù, G. Micheli, P. Gaillardon
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引用次数: 5

Abstract

As an answer to the new electronics market demands, semiconductor industry is looking for different materials, new process technologies and alternative design solutions that can support Silicon replacement in the VLSI domain. The recent introduction of graphene, together with the option of electrostatically controlling its doping profile, has shown a possible way to implement fast and power efficient Reconfigurable Gates (RGs). Also, and this is the most important feature considered in this work, those graphene RGs show higher expressive power, i.e., they implement more complex functions, like Majority, MUX, XOR, with less area w.r.t. CMOS counterparts. Unfortunately, state-of-the-art synthesis tools, which have been customized for standard NAND/NOR CMOS gates, do not exploit the aforementioned feature of graphene RGs. In this paper, we present a post-synthesis tool that translates the gate level netlist obtained from commercial synthesis tools to a more optimized netlist that can efficiently integrate graphene RGs. Results conducted on a set of open-source benchmarks demonstrate that the proposed strategy improves, on average, both area and performance by 17% and 8.17% respectively.
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通过合成后优化开发石墨烯可重构门的表达能力
为了满足新的电子市场需求,半导体行业正在寻找不同的材料、新的工艺技术和替代设计解决方案,以支持VLSI领域的硅替代。最近引入的石墨烯,以及静电控制其掺杂谱的选择,显示了一种实现快速和节能的可重构门(RGs)的可能方法。此外,这是本工作中考虑的最重要的特性,这些石墨烯rg具有更高的表达能力,即它们实现更复杂的功能,如Majority, MUX, XOR,而与CMOS对应器件相比,面积更小。不幸的是,最先进的合成工具,已经为标准的NAND/NOR CMOS门定制,不能利用上述石墨烯RGs的特性。在本文中,我们提出了一种合成后工具,将从商业合成工具获得的栅极级网表转换为更优化的网表,可以有效地集成石墨烯RGs。在一组开源基准测试中进行的结果表明,该策略的面积和性能平均分别提高了17%和8.17%。
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