Ryan Welch, Tom Jenkins, Bob Neidhard, Lois Kehias, Tony Quach, P. Watson, Rick Worley, Mike Barsky, Randy Sandhu, Mike Wojtowicz
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引用次数: 8
Abstract
This work reports on efforts to demonstrate AlGaN/GaN Low Noise Amplifiers (LNAs) in epitaxial material designed to build power transistors. The hybrid LNA circuit produced a noise figure of 3 dB, a gain of 8.5 dB, an input return loss of -6.5 dB and an output return loss of -9 dB at 4 GHz. Further, devices in an enhanced process have improved noise characteristics and more realizable match conditions. These device enhancements will enable robust X-band LNA demonstrations.
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